MOSFET 2N-CH 30V 6.6A 8DSO BSO200N03
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Description:
MOSFET 2N-CH 30V 6.6A 8DSO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
8-SOIC(0.154,3.90mm wide)
DataSheet
BSO200N03(FET, MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23253,Price reference "real-time change" China/Hongkong。 BSO200N03 package/specs, Download BSO200N03、Datasheet。